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TK7P65W

INCHANGE
Part Number TK7P65W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK7P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.8Ω. ·Enhancement mode: V...
Datasheet PDF File TK7P65W PDF File

TK7P65W
TK7P65W

Overview
isc N-Channel MOSFET Transistor TK7P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
8Ω.
·Enhancement mode: Vth =2.
5 to 3.
5V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6.
8 A IDM Drain Current-Single Pulsed 27.
2 A PD Total Dissipation @TC=25℃ 60 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.
09 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage V...


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