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TK7P60W

Toshiba
Part Number TK7P60W
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Mar 27, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK7P60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-...
Datasheet PDF File TK7P60W PDF File

TK7P60W
TK7P60W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK7P60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
5 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 0.
35 mA) 3.
Packaging and Internal Circuit TK7P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.
3.
0 TK7P60W 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 7.
0 A Drain current (pulsed) (Note 1) IDP 28 Power dissipation (Tc = 25) PD 60 W Single-pulse avalanche energy (Note 2) EAS 92 mJ Avalanche current IAR 1.
8 A Reverse drain current (DC) (Note 1) IDR 7.
0 Reverse drain current (pulsed) (Note 1) IDRP 28 Channel temperature Tch 150 ...


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