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TK7P60W

INCHANGE
Part Number TK7P60W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (typ.) ·Easy to control Gate ...
Datasheet PDF File TK7P60W PDF File

TK7P60W
TK7P60W

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
5Ω (typ.
) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.
7 to 3.
7V (VDS = 10 V, ID=0.
35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 7.
0 A IDM Drain Current-Single Pulsed 28 A PD Total Dissipation @TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 4.
17 ℃/W TK7P60W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDS...


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