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IXTH75N10L2

IXYS
Part Number IXTH75N10L2
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Aval...
Datasheet PDF File IXTH75N10L2 PDF File

IXTH75N10L2
IXTH75N10L2

Overview
Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTH75N10L2 IXTT75N10L2 D O DD RGi G O ww O S VDSS = 100V ID25 = 75A ≤ RDS(on) 21mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C 1.
6mm (0.
063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 100 V 100 V ±20 V ±30 V 75 A 225 A 75 A 2.
5 J 400 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
6.
0 g 4.
0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25 , Note 1 Characteristic...


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