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IXTH75N10

INCHANGE
Part Number IXTH75N10
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 12, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXTH75N10 PDF File

IXTH75N10
IXTH75N10


Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Plused 300 A PD Total Dissipation @TC=25℃ 300 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
42 UNIT ℃/W IXTH75N10 isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH75N10 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250uA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250uA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 33.
5A 25 mΩ IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Diode Forward On-voltage VGS= ±20V;VDS= 0 VDS=80V; VGS= 0 VDS=80V; VGS= 0;TJ=125℃ IF= 67A ;VGS= 0 ±100 nA 200 1000 µA 1.
75 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you ...



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