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IXTH75N10

IXYS Corporation
Part Number IXTH75N10
Manufacturer IXYS Corporation
Description N-Channel MOSFET
Published Apr 5, 2005
Detailed Description MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 ...
Datasheet PDF File IXTH75N10 PDF File

IXTH75N10
IXTH75N10

Overview
MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque O Maximum lead temperature for soldering S 1.
6 mm (0.
062 in.
) from case for 10 s 100 V 100 V ±20 V ±30 V 67N10 75N10 67N10 75N10 67 A 75 A 268 A 300 A 300 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C TO-204 TO-247 TO-268 1.
13/10 Nm/lb.
in.
18 g 6 g 5 g 10 °C TO-204 AE (IXTM) (TAB) DG TO-268 (IXTT) G G = Gate, S = Source, Features S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to d...


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