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IXTP7N60P

INCHANGE
Part Number IXTP7N60P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP7N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully ...
Datasheet PDF File IXTP7N60P PDF File

IXTP7N60P
IXTP7N60P

Overview
isc N-Channel MOSFET Transistor IXTP7N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.
1Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7 IDM Drain Current-Single Pulsed 14 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
83 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CON...


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