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IXTP7N60P

IXYS
Part Number IXTP7N60P
Manufacturer IXYS
Description Power MOSFET
Published Jun 12, 2010
Detailed Description PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RD...
Datasheet PDF File IXTP7N60P PDF File

IXTP7N60P
IXTP7N60P

Overview
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.
1 Ω Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, T J ≤150° C, R G = 18 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings TO-220 (IXTP) 600 V 600 V ±30 V ±40 V G DS 7 A 14 A TO-263 (IXTA) 7 A 20 mJ 400 mJ 10 V/ns G S (TAB) (TAB) 150 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
4 g 3 g G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package indu...


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