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IXTP7N60PM

IXYS Corporation
Part Number IXTP7N60PM
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jun 7, 2014
Detailed Description Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche...
Datasheet PDF File IXTP7N60PM PDF File

IXTP7N60PM
IXTP7N60PM

Overview
Preliminary Technical Information PolarTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA7N60PM IXTP7N60PM VDSS ID25 RDS(on) = 600V = 4A ≤ 1.
1Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 600 600 8 c T ± 30 ± 40 4 14 V V A A 7 400 10 A mJ t e n 41 om D S W Features g V V Ω r e .
n a ww 600 3.
0 TJ = 125°C ua 300 260 1.
13/10 2.
5 Characteristic Values Min.
Typ.
Max.
5.
5 1.
1 - 55 .
.
.
+150 150 - 55 .
.
.
+150 ce.
°C °C °C °C °C Nm/lb.
in.
Plastic overmolded tab for electrical isolation International standard package Avanlanche rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings Applications DC-DC converters Battery chargers S...


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