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IXTQ200N06P

IXYS
Part Number IXTQ200N06P
Manufacturer IXYS
Description Power MOSFET
Published Nov 21, 2020
Detailed Description PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V...
Datasheet PDF File IXTQ200N06P PDF File

IXTQ200N06P
IXTQ200N06P

Overview
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.
0 V A mΩ Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS VDGR VGS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL T SOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient Continuous TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P 60 V 60 V ±30 V ±20 V 200 A 75 A 400 A 60 A 80 mJ 4.
0 J 10 ...


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