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TK31N60W5

INCHANGE
Part Number TK31N60W5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.099Ω. ·Enhancement mode: Vth =3 t...
Datasheet PDF File TK31N60W5 PDF File

TK31N60W5
TK31N60W5

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
099Ω.
·Enhancement mode: Vth =3 to4.
5V (VDS = 10 V, ID=15.
4A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30.
8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 230 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha...


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