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TK31N60X

INCHANGE
Part Number TK31N60X
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK31N60X ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode...
Datasheet PDF File TK31N60X PDF File

TK31N60X
TK31N60X

Overview
isc N-Channel MOSFET Transistor TK31N60X ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
088Ω.
·Enhancement mode: Vth =2.
5 to 3.
5V (VDS = 10 V, ID=1.
5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30.
8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 230 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...


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