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TK31N60W

Toshiba
Part Number TK31N60W
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jul 3, 2014
Detailed Description TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK31N60W PDF File

TK31N60W
TK31N60W

Overview
TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31N60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.
073 Ω (typ.
) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 1.
5 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (puls...


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