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2SC5200N

Toshiba
Part Number 2SC5200N
Manufacturer Toshiba
Description NPN Transistor
Published Dec 20, 2020
Detailed Description Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High co...
Datasheet PDF File 2SC5200N PDF File

2SC5200N
2SC5200N

Overview
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1.
Applications • Power Amplifiers 2.
Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3.
Packaging and Internal Circuit 2SC5200N 1.
Base 2.
Collector (Heatsink) 3.
Emitter TO-3P(N) 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation (Note 1) VCBO VCEO VEBO IC IB PC 230 V 230 5 15 A 1.
5 150 W Junction temperature Storage temperature Tj 150  Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating cond...


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