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MMBT5551

ON Semiconductor
Part Number MMBT5551
Manufacturer ON Semiconductor
Description NPN Amplifier
Published Feb 23, 2021
Detailed Description 2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier De...
Datasheet PDF File MMBT5551 PDF File

MMBT5551
MMBT5551

Overview
2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
2N5551 MMBT5551 3 TO-92 2 1 SOT-23 Marking: 3S 1.
Base 2.
Emitter 3.
Collector Ordering Information(1) Part Number 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551 Top Mark 5551 5551 5551 5551 3S Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L Note: 1.
Suffix “-C” means Center Collector in 2N5551 (1.
Emitter 2.
Collector 3.
Base) Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.
0 V) Packing Method Ammo Tape and Reel Tape and Reel Bulk Tape and Reel © 2009 Semiconductor Components Industries, LLC.
, 2N5551 / MMBT5551 Rev.
2 1 www.
onsemi.
com 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Absolute Maximum Ratings(2) Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector current - Continuous 600 mA TJ, Tstg(3) Junction and Storage Temperature -55 to +150 °C Notes: 2.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3.
These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits.
ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
Thermal Characteristics(4) Values are at TA = 25°C unless otherwise noted.
Sym...


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