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C5034

Panasonic
Part Number C5034
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Uni...
Datasheet PDF File C5034 PDF File

C5034
C5034



Overview
Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.
6±0.
2 s Features 9.
9±0.
3 φ3.
2±0.
1 2.
9±0.
2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 4.
1±0.
2 8.
0±0.
2 Solder Dip / s Absolute Maximum Ratings (TC=25˚C) 15.
0±0.
3 3.
0±0.
2 1.
2±0.
15 1.
45±0.
15 2.
6±0.
1 0.
7±0.
1 e ) Parameter Symbol Ratings Unit +0.
5 13.
7–0.
2 c type Collector to base voltage VCBO 500 V n d tage.
ued VCES 500 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V n u t ed, Peak collector current ICP 15 A roduc d typ Collector current IC 7 A te tin urP tinue Basecurrent IB 3 A g fo con Collector power TC=25°C win dis dissipation Ta=25°C PC 35 W 2.
0 in n follo ned Junction temperature a o ludes e, pla Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C c s tinued incance typ Electrical Characteristics (TC=25˚C) M is con inten Parameter Symbol Conditions /Dis , ma Collector cutoff current D ance type Emitter cutoff current inten nce Collector to emitter voltage Ma intena Forward current transfer ratio ed ma Collector to emitter saturation voltage (plan Base to emitter saturation voltage ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.
1A VCE = 5V, IC = 3A IC = 3A, IB = 0.
6A IC = 3A, IB = 0.
6A 0.
75±0.
1 2.
54±0.
2 5.
08±0.
4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package min typ max Unit 100 µA 100 µA 400 V 10 8 1.
0 V 1.
5 V Transition frequency fT VCE = 10V, IC = 0.
5A, f = 1MHz 10 MHz Turn-on time Storage time Fall time ton IC = 3A, IB1 = 0.
6A, IB2 = –1.
2A, tstg VCC = 150V tf 1.
0 µs 2.
0 µs 0.
3 µs 1 Power Transistors 2SC5034 Collector power dissipation PC (W) Base to emitter saturation voltage VBE(sat) (V...



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