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2SC5609G

Panasonic
Part Number 2SC5609G
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5609G Silicon NPN epitaxial planar type ...
Datasheet PDF File 2SC5609G PDF File

2SC5609G
2SC5609G

Overview
Transistors This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G  Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2  Absolute Maximum Ratings Ta = 25°C  Pin Name Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V / Collector-emitter voltage (Base open) VCEO 50 V 1.
Base 2.
Emitter 3.
Collector e Emitter-base voltage (Collector open) pe) Collector current nc d ge.
ed ty Peak collector current sta tinu Collector power dissipation a e cycle iscon Junction temperature life d, d Storage temperature VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW Tj 125 °C Tstg –55 to +125 °C  Marking Symbol: 3F ten tinuur Prodtiuncuted type  Electrical Characteristics Ta = 25°C±3°C ing fo iscon Parameter Symbol Conditions Min Typ Max in n llow d d Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 s fo lane Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 a o clude pe, p Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 c d in e ty Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.
1 tinue anc Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 M is/Discon, mainten Forward current transfer ratio hFE1 hFE2 * VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA 180 390 90 D ance type Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.
1 0.
3 inten nce Transition frequency fT VCB = 10 V, IE = –2 mA, f = 200 MHz 80 Ma tena Collector output capacitance ain (Common base, input open circuited) Cre VCB = 10 V, IE = 0, f = 1 MHz 3.
5 d m Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(plane 2.
*: Pulse measurement Unit V V V mA mA  V MHz pF Publication date : November 2008 SJC00427BED 1 This product comp...


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