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2SC5606

NEC
Part Number 2SC5606
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICA...
Datasheet PDF File 2SC5606 PDF File

2SC5606
2SC5606

Overview
PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold ORDERING INFORMATION Part Number 2SC5606 2SC5606-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.
3 1.
5 35 115 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.
08 cm × 1.
0 mm (t) glass epoxy substrate Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P14658EJ2V0DS00 (2nd edition) Date Published April 2000 NS CP(K) Printed in Japan The mark • shows major revised points.
© 1999, 2000 2SC5606 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Gain Maximum Stable Power Gain fT S21e NF Cre Note 2 2 Symbol Test Conditions MIN.
TYP.
MAX.
Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 5 mA – – 50 – – 70 200 200 100 nA nA – VCE = 2 V, IC = 20 ...


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