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2SC5604

NEC
Part Number 2SC5604
Manufacturer NEC
Description NPN SILICON RF TRANSISTOR
Published Sep 29, 2008
Detailed Description DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LE...
Datasheet PDF File 2SC5604 PDF File

2SC5604
2SC5604

Overview
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES www.
DataSheet4U.
com • High-gain transistor for buffer amplifier : S21e2 = 10.
0 dB TYP.
@ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted • 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number 2SC5604 2SC5604-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 6.
0 2.
0 35 140 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg 2 Note Mounted on 1.
08 cm × 1.
0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
Document No.
PU10046EJ02V0DS (2nd edition) Date Published December 2001 CP(K) Printed in Japan The mark • shows major revised points.
© NEC Compound Semiconductor Devices 2001 2SC5604 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product www.
DataSheet4U.
com Insertion Power Gain Symbol Test Conditions MIN.
TYP.
MAX.
Unit ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 1 V, IC =...


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