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2SK3435

Renesas
Part Number 2SK3435
Manufacturer Renesas
Description N-CHANNEL POWER MOSFET
Published Dec 7, 2021
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel M...
Datasheet PDF File 2SK3435 PDF File

2SK3435
2SK3435

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX.
(VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX.
(VGS = 4.
0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan.
(TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ±80 A ID(pulse) ±160 A Total Power Dissipation (TC = 25°C) PT 84 W Total Power Dissipation (TA = 25°C) PT 1.
5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 Single Avalanche Energy Note2 IAS 31 A EAS 96 mJ Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V (TO-262) (TO-220SMD) The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14604EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) The mark 5 shows major revised points.
© Printed in Japan 1999, 2001 2SK3435 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) | yfs | RDS(on)1 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40...


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