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S9012

Fairchild Semiconductor
Part Number S9012
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Dec 7, 2021
Detailed Description SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (P...
Datasheet PDF File S9012 PDF File

S9012
S9012


Overview
SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
• High total power dissipation.
(PT=625mW) • High Collector Current.
(IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 1 TO-92 1.
Emitter 2.
Base 3.
Collector Ratings -40 -20 -5 -500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = -100µA, IE =0 IC = -1mA, IB =0 IE = -100µA, IC =0 VCB = -25V, IE =0 VEB = -3V, IC =0 VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -1V, IC = -10mA Min.
-40 -20 -5 64 40 -0.
6 Typ.
120 90 -0.
18 -0.
95 -0.
67 Max.
-100 -100 202 Units V V V nA nA -0.
6 V -1.
2 V -0.
7 V hFE Classification Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144 ~ 202 ©2002 Fairchild Semiconductor Corporation Rev.
A4, November 2002 SS9012 Typical Characteristics IC[mA], COLLECTOR CURRENT -50 IB=-300µA IB=-250µA -40 IB=-200µA -30 IB=-150µA -20 IB=-100µA IB=-50µA -10 -0 -0 -10 -20 -30 -40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1.
Static Characteristic -1000 VBE(sat) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 VCE(sat) -10 -10 IC=10IB -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Saturatio...


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