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S9012

SeCoS
Part Number S9012
Manufacturer SeCoS
Description PNP Silicon Transistor
Published Jul 15, 2015
Detailed Description Elektronische Bauelemente S9012 PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-...
Datasheet PDF File S9012 PDF File

S9012
S9012

Overview
Elektronische Bauelemente S9012 PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 33 Power dissipation PCM : 0.
3 W Collector Current ICM : - 0.
5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC V 1 2 A L 3 Top View 12 G 1 Base BS 2 Emitter C D HK J SOT-23 Dim Min Max A 2.
800 3.
040 B 1.
200 1.
400 C 0.
890 1.
110 D 0.
370 0.
500 G 1.
780 2.
040 H 0.
013 0.
100 J 0.
085 0.
177 K 0.
450 0.
600 L 0.
890 1.
020 S 2.
100 2.
500 V 0.
450 0.
600 All Dimension in mm ELECTRICAL CHARACTERISTICS ( Tamp.
=25OC unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic= -100 A IE=0 Ic= -1mA IB=0 -40 -25 V V Emitter-base breakdown voltage Collector cut-off current Collector cut-off current V(BR)EBO ICBO ICEO IE= -100 A IC=0 VCB= - 40V , IE=0 VCE= - 20V , IB=0 -5 V -0.
1 A -0.
1 A Emitter cut-off current IEBO VEB= - 5V , IC=0 - 0.
1 A DC current gain HFE(1) HFE(2) VCE= -1V , IC=- 50 mA VCE= -1V , IC= -500mA 120 40 400 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=- 50mA -0.
6 V Base-emitter saturation voltage VBE(sat) IC=- 500mA, IB=- 50m A -1.
2 V Transition frequency VCE= -6V, IC= - 20mA fT f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range L 120-200 H 200-350 J 300-400 DEVICE MARKING http://www.
SeCoSGmbH.
com 17-Dec-2007 Rev.
B S9012 =2T1 Any changing of specification will not be informed individual Page 1 of 1 ...


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