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S9012

BL
Part Number S9012
Manufacturer BL
Description PNP Silicon Transistor
Published May 6, 2008
Detailed Description BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Compleme...
Datasheet PDF File S9012 PDF File

S9012
S9012


Overview
BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.
(IC= -500mA) Complementary To S9013.
Excellent HFE Linearity.
Production specification S9012 Pb Lead-free www.
DataSheet4U.
com APPLICATIONS z High Collector Current.
SOT-23 ORDERING INFORMATION Type No.
S9012 Marking 2T1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -25 -5 -500 300 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC081 Rev.
A www.
galaxycn.
com 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage www.
DataSheet4U.
com Production specification S9012 MIN -40 -25 -5 -0.
1 -0.
1 -0.
1 120 400 -0.
6 -1.
2 150 5 V V MHz pF ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=-100μA,IE=0 IC=-1mA,IB=0 B TYP MAX UNIT V V V μA μA μA IE=-100μA,IC=0 VCB=-40V,IE=0 VCE=-20V,IB=0 B Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VEB=-5V,IC=0 VCE=-1V,IC=-50mA IC=-500mA, IB= -50mA B IC=-500mA, IB= -50mA B VCE=-6V, IC= -20mA f=30MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION Rank Range MARKING OF hFE(1) L 120-200 H 200-350 2T1 J 300-400 Document number: BL/SSSTC081 Rev.
A www.
galaxycn.
com 2 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Production specification S9012 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.
DataSheet4U.
com Document number: BL/SSSTC081 Rev.
A www.
galaxycn.
com 3 BL Galaxy Electrical PNP S...



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