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HGTG20N60A4

ON Semiconductor
Part Number HGTG20N60A4
Manufacturer ON Semiconductor
Description IGBT
Published Oct 2, 2022
Detailed Description IGBT - SMPS 600 V, 40 A HGTG20N60A4 Description The HGTG20N60A4 combines the best features of high input impedance of a ...
Datasheet PDF File HGTG20N60A4 PDF File

HGTG20N60A4
HGTG20N60A4

Overview
IGBT - SMPS 600 V, 40 A HGTG20N60A4 Description The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
Features • 40 A, 600 V @ TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.
8 V @ IC = 20 A • Typical Fall Time: 55 ns at TJ = 125°C • Low Conduction Loss • This is a Pb−Free Device Applications • UPS, Welder www.
onsemi.
com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K 20N60A4 © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev.
3 $Y &Z &3 &K 20N60A4 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 o...


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