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HGTG20N60B3D

Fairchild Semiconductor
Part Number HGTG20N60B3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG2...
Datasheet PDF File HGTG20N60B3D PDF File

HGTG20N60B3D
HGTG20N60B3D

Overview
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Formerly developmental type TA49016.
Features • 40A, 600V at TC = 25oC • Typical Fall Time.
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140ns at 150oC • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG20N60B3D PACKAGE TO-247 BRAND G20N60B3D COLLECTOR (BOTTOM SIDE METAL) NOTE: When ordering, use the entire part number.
Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev.
B HGTG20N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60B3D Collector to Emitter Voltage .
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BVCES Collector to Gate Voltage, RGE = 1MΩ .
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BVCGR Collector Current Continuous .
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