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HGTG20N60B3

ON Semiconductor
Part Number HGTG20N60B3
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching ...
Datasheet PDF File HGTG20N60B3 PDF File

HGTG20N60B3
HGTG20N60B3

Overview
UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49050.
Features • 40 A, 600 V at TC = 25°C • 600 V Switching SOA Capability • Typical Fall Time 140 ns at 150°C • Short Circuit Rated • Low Conduction Loss • Related Literature ♦ TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” • This is a Pb−Free Device www.
onsemi.
com C G E EC G COLLECTOR (FLANGE) TO−247−3LD SH...


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