DatasheetsPDF.com

HGTG40N60C3

Fairchild Semiconductor
Part Number HGTG40N60C3
Manufacturer Fairchild Semiconductor
Description UFS Series N-Channel IGBT
Published Dec 14, 2009
Detailed Description HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage s...
Datasheet PDF File HGTG40N60C3 PDF File

HGTG40N60C3
HGTG40N60C3

Overview
HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developmental type TA49273.
Features • 75A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG40N60C3 PACKAGE TO-247 PKG.
NO.
G40N60C3 NOTE: When ordering, use the entire part number.
Symbol C G E www.
DataSheet4U.
com FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGTG40N60C3 Rev.
B HGTG40N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60C3 600 75 40 300 ±20 ±30 40A at 600V 291 2.
33 100 -55 to 150 260 5 10 UNITS V A A A V V W W/oC mJ oC oC µs µs Collector to Emitter Voltage .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
BVCES Collector Current Continuous At TC = 25oC .
.
.
.
.
.
.
.
.
.
.
.
.
.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)