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HGTG20N60B3D

ON Semiconductor
Part Number HGTG20N60B3D
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated hi...
Datasheet PDF File HGTG20N60B3D PDF File

HGTG20N60B3D
HGTG20N60B3D

Overview
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The diode used in anti−parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Formerly developmental type TA49016.
Features • 40 A, 600 V at TC = 25°C • Typical Fall...


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