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HGTG30N60B3D

ON Semiconductor
Part Number HGTG30N60B3D
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated hi...
Datasheet PDF File HGTG30N60B3D PDF File

HGTG30N60B3D
HGTG30N60B3D

Overview
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT used is the development type TA49170.
The diode used in anti−parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
Features • 60 A, 600 V, TC = 25°C • 600 V Switching SOA Capability • Typical Fall Time 90 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti−Parallel Diode • ...


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