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HGTG30N60B3

ON Semiconductor
Part Number HGTG30N60B3
Manufacturer ON Semiconductor
Description IGBT
Published Apr 21, 2020
Detailed Description IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET ...
Datasheet PDF File HGTG30N60B3 PDF File

HGTG30N60B3
HGTG30N60B3

Overview
IGBT - NPT 600 V HGTG30N60B3 Description The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(SAT) = 1.
45 V @ IC = 30 A • Typical Fall Time .
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90 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.
onsemi.
com VCES 1200 V IC 30 A C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60B3 © Semiconductor Components Industries, LLC, 2001 March, 2020 − Rev.
3 $Y &Z &3 &K G30N60B3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HGTG30N60B3/D HGTG30N60B3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Description Ratings Unit BVCES Collector to Emitter Voltage 600 V IC Collector Current Continuous TC = 25°C 60 A TC = 110°C 30 A ICM Collector Current Pulsed (Note 1) 220 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C (Figure 2) 60 A at 600 V PD Power Dissipation Total TC = 25°C 208 W Power Dissipation Derating TC > 25°C 1.
67 W/°C EARV Reverse Voltage Avalanche Energy 100 mJ TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering 260 °C TSC Short Circuit Withstand Time (Note 2) VGE = 12 V 4 ms Short Circuit Withstand Time (Note 2) VGE = 10 V 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, devi...


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