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HGTG30N60B3D

Fairchild Semiconductor
Part Number HGTG30N60B3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast...
Datasheet PDF File HGTG30N60B3D PDF File

HGTG30N60B3D
HGTG30N60B3D

Overview
HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49170.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49172.
Packaging JEDEC STYLE TO-247 E C G TO-268AA C G E Ordering Information PART NUMBER HGTG30N60B3D HGT4E30N60B3DS PACKAG...


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