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HAT2020R

Renesas
Part Number HAT2020R
Manufacturer Renesas
Description Silicon N-Channel Power MOSFET
Published May 1, 2023
Detailed Description HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate ...
Datasheet PDF File HAT2020R PDF File

HAT2020R
HAT2020R

Overview
HAT2020R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1157-1200 (Previous: ADE-208-439J) Rev.
12.
00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.
12.
00 Sep 07, 2005 page 1 of 6 HAT2020R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 8 ID (pulse) Note 1 64 Body-drain diode reverse drain current IDR 8 Channel dissipation Pch Note 2 2.
5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source...


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