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HAT2024R

Hitachi Semiconductor
Part Number HAT2024R
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th. Edition July 1997 Features •...
Datasheet PDF File HAT2024R PDF File

HAT2024R
HAT2024R

Overview
HAT2024R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-494 C (Z) 4th.
Edition July 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 34 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S 3 1, 3 2, 4 5, 6, 7, 8 S G Dra MOS1 MOS2 HAT2024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch*2 Pch * Tch Tstg 3 1 Ratings 30 ±20 5.
5 44 5.
5 2 3 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 3.
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 2 HAT2024R Electrical Characteristics (Ta = 25°C) Item Drain to source b...


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