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HAT2022R

Hitachi Semiconductor
Part Number HAT2022R
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 J (Z) 11th Edition February 1999 Featur...
Datasheet PDF File HAT2022R PDF File

HAT2022R
HAT2022R

Overview
HAT2022R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-440 J (Z) 11th Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2022R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 11 88 11 2.
5 150 – 55 to + 150 Unit V V A A A W °C °C 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 — — 1.
0 — — 12 — — — — — — — — — Typ — — — — — 0.
012 0.
017 18 1450 950 380 60 450 80 160 0.
8 70 Max — — ± 10 10 2.
0 0.
015 0.
025 — — — — — — — —...


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