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74HCU04D

Toshiba
Part Number 74HCU04D
Manufacturer Toshiba
Description Hex Inverter
Published Jul 19, 2023
Detailed Description CMOS Digital Integrated Circuits Silicon Monolithic 74HCU04D 74HCU04D 1. Functional Description • Hex Inverter 2. Gene...
Datasheet PDF File 74HCU04D PDF File

74HCU04D
74HCU04D

Overview
CMOS Digital Integrated Circuits Silicon Monolithic 74HCU04D 74HCU04D 1.
Functional Description • Hex Inverter 2.
General The 74HCU04D is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
Since the internal circuit is composed of a single stage inverter, it can be used in analog applications such as crystal oscillators.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 4 ns (typ.
) at VCC = 5 V (3) Low power dissipation: ICC = 1.
0 µA (max) Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage range: VCC(opr) = 2.
0 to 6.
0 V Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020.
4.
Packaging SOIC14 ©2016-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-07 2020-11-11 Rev.
3.
0 5.
Pin Assignment 6.
Marking 7.
IEC Logic Symbol 74HCU04D ©2016-2020 2 Toshiba Electronic Devices & Storage Corporation 2020-11-11 Rev.
3.
0 8.
Truth Table 74HCU04D A Y L H H L 9.
Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.
5 to 7.
0 V Input voltage VIN -0.
5 to VCC + 0.
5 V Output voltage Input diode current Output diode current Output current VCC/ground current VOUT IIK IOK IOUT ICC -0.
5 to VCC + 0.
5 V ±20 mA ±20 mA ±25 mA ±50 mA Power dissipation Storage temperature PD (Note 1) 500 mW Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) ma...


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