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TTA006B

Part Number	TTA006B
Manufacturer	Toshiba
Description	Silicon PNP Transistors
Published	Dec 13, 2023
Detailed Description	Bipolar Transistors Silicon PNP Epitaxial Type TTA006B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers ...
Datasheet	TTA006B PDF File

Overview

Bipolar Transistors Silicon PNP Epitaxial Type TTA006B 1.
Applications • Power Amplifiers • Audio-Frequency Amplifiers 2.
Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ.
) : fT = 70 MHz (typ.
) 3.
Packaging and Internal Circuit (Note) TTA006B 1.
Emitter 2.
Collector 3.
Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage.
Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
4.
Absolute Maximum ...

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