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TTA0001

Part Number	TTA0001
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Dec 9, 2012
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCE...
Datasheet	TTA0001 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = －160 V (min.
) • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
TTA0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse VCBO VCEO VEBO IC ICP IB PC Tj Tstg -160 V -160 V -5 V -18 A -35 A -9 A 150 W 150 °C −55 to 150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER JEDEC ― JEITA...

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