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SSM3K318R

Toshiba
Part Number SSM3K318R
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Dec 14, 2023
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K318R 1. Applications • Load Switches • Ultra-High-Speed Switching 2. Features (1) 4.5...
Datasheet PDF File SSM3K318R PDF File

SSM3K318R
SSM3K318R

Overview
MOSFETs Silicon N-Channel MOS SSM3K318R 1.
Applications • Load Switches • Ultra-High-Speed Switching 2.
Features (1) 4.
5-V gate drive voltage.
(2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3.
Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 Rev.
2.
0 SSM3K318R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (Note 1) ID 2.
5 A Drain current (pulsed) (Note 1) IDP 5 Power d...


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