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SSM3K315T

Toshiba Semiconductor
Part Number SSM3K315T
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applic...
Datasheet PDF File SSM3K315T PDF File

SSM3K315T
SSM3K315T

Overview
SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applications • 4.
5-V drive • Low ON-resistance : Ron = 41.
5 mΩ (max) (@VGS = 4.
5 V) : Ron = 27.
6 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 0～0.
1 0.
15 0.
16±0.
05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.
0 A Pulse IDP (Note 1) 12.
0 Drain power dissipation PD (Note 1) 700 mW t = 10 s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy ...


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