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SSM3K318T

Toshiba Semiconductor
Part Number SSM3K318T
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 21, 2010
Detailed Description SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications...
Datasheet PDF File SSM3K318T PDF File

SSM3K318T
SSM3K318T

Overview
SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications • 4.
5 V drive • Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.
5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 0～0.
1 0.
15 0.
16±0.
05 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 Absolute Maximum Ratings (Ta = 25°C) １ Characteristic Symbol Rating Unit ２ ３ Drain-Source voltage VDSS 60 V Gate-Source voltage VGSS ±20 V 0.
7±0.
05 Drain current DC ID Pulse IDP 2.
5 A 5.
0 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1: Gate Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/curr...


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