DatasheetsPDF.com

FDMS8320L

ON Semiconductor
Part Number FDMS8320L
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 20, 2023
Detailed Description FDMS8320L N-Channel PowerTrench® MOSFET FDMS8320L N-Channel PowerTrench® MOSFET 40 V, 248 A, 1.1 mΩ Features „ Max rDS(...
Datasheet PDF File FDMS8320L PDF File

FDMS8320L
FDMS8320L

Overview
FDMS8320L N-Channel PowerTrench® MOSFET FDMS8320L N-Channel PowerTrench® MOSFET 40 V, 248 A, 1.
1 mΩ Features „ Max rDS(on) = 1.
1 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 1.
5 mΩ at VGS = 4.
5 V, ID = 27 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
Applications „ OringFET / Load Switching „ Synchronous Rectification „ DC-DC Conversion Top Pin 1 Bottom Pin 1 S S S D S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 40 ±20 248 157 36 943 264 104 2.
5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information 1.
2 (Note 1a) 50 °C/W Device Marking FDMS8320L Device FDMS8320L Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Semiconductor Componets Industries, LLC.
August-2017, Rev.
2 Publication Order Number: FDMS8320L/D FDMS8320L N-Channel PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless other...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)