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FDMS8320LDC

Fairchild Semiconductor
Part Number FDMS8320LDC
Manufacturer Fairchild Semiconductor
Description N-Channel Dual Cool Power Trench MOSFET
Published Aug 24, 2015
Detailed Description FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® M...
Datasheet PDF File FDMS8320LDC PDF File

FDMS8320LDC
FDMS8320LDC

Overview
FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET October 2012 FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET 40 V, 130 A, 1.
1 mΩ Features „ Max rDS(on) = 1.
1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.
5 mΩ at VGS = 4.
5 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Applications „ OringFET / Load Switching „ Synchronous Rectification „ DC-DC Conversion Pin 1 S D D D D S S D D G S S S Pin 1 S G Top Power 56 Bottom D D MOSFET Maximum Rati...


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