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FDMS8320LDC

ON Semiconductor
Part Number FDMS8320LDC
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 20, 2023
Detailed Description DATA SHEET www.onsemi.com MOSFET – N-Channel, DUAL COOL) DFN8, POWERTRENCH) 40 V, 192 A, 1.1 mW FDMS8320LDC Features •...
Datasheet PDF File FDMS8320LDC PDF File

FDMS8320LDC
FDMS8320LDC

Overview
DATA SHEET www.
onsemi.
com MOSFET – N-Channel, DUAL COOL) DFN8, POWERTRENCH) 40 V, 192 A, 1.
1 mW FDMS8320LDC Features • Max RDS(on) = 1.
1 mW at VGS = 10 V, ID = 44 A • Max RDS(on) = 1.
5 mW at VGS = 4.
5 V, ID = 37 A • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery • MSL1 Robust Package Design • 100% UIL Tested • This Device is Pb−Free, Halogen Free and RoHS Compliant Applications • OringFET/Load Switching • Synchronous Rectification • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−to−Source Voltage 40 V VGS Gate−to−Source Voltage ±20 V ID Drain Current A − Continuous TC = 25°C 192 − Continuous TA = 25°C (Note 1a) 44 − Pulsed (Note 4) 300 EAS Single Pulse Avalanche Energy (Note 3) 661 mJ PD Power Dissipation, TC = 25°C Power Dissipation, TA = 25°C (Note 1a) 125 W 3.
2 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Pin 1 DDDD S GSS S Pin 1 Top Bottom DFN8 DUAL COOL CASE 506EG MARKING DIAGRAM ÉÉÉÉ2ÉÉÉÉGAYÉÉÉÉWZÉÉÉÉ 2G = Specific Device Code A = Assembly Location Y = Year W = Work Week Z = Assembly Lot Code S1 S2 S3 G4 8D 7D 6D 5D ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012 1 February, 2023 − Rev.
4 Publication Order Number: FDMS8320LDC/D FDMS8320LDC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 40 − − V DBVDSS/DTJ Breakdown Voltage Temperature Coef...


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