DatasheetsPDF.com

FDP6030BL

ON Semiconductor
Part Number FDP6030BL
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description FDP6030BL/FDB6030BL FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET Features General Description • 40 ...
Datasheet PDF File FDP6030BL PDF File

FDP6030BL
FDP6030BL

Overview
FDP6030BL/FDB6030BL FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET Features General Description • 40 A, 30 V.
RDS(ON) = 0.
018 Ω @ VGS = 10 V RDS(ON) = 0.
024 Ω @ VGS = 4.
5 V.
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D D G D S TO-220 FDP Series G S G TO-263AB S FDB Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FDP6030BL FDB6030BL Units VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Maximum Drain Current - Continuous (Note 1) - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 30 ±20 40 120 60 0.
36 -65 to +175 2.
5 62.
5 V V A W W/°C °C °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDB6030BL FDB6030BL 13’’ FDP6030BL FDP6030BL Tube Tape Width 24mm N/A Quantity 800 45 2000 Semiconductor Components Industries, LLC.
November-2017, Rev.
3 Publication Order Number: FDB6030BL/D FDP6030BL/FDB6030BL Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 40 A IAR Maximu...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)