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FDP6030BL

Fairchild Semiconductor
Part Number FDP6030BL
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N...
Datasheet PDF File FDP6030BL PDF File

FDP6030BL
FDP6030BL

Overview
FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features • 40 A, 30 V.
RDS(ON) = 0.
018 Ω @ VGS = 10 V RDS(ON) = 0.
024 Ω @ VGS = 4.
5 V.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low RDS(ON).
• 175°C maximum junction temperature rating.
D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP6030BL FDB6030BL 30 ±20 40 120 60 0.
36 Units V V A W W/°C °C °C/W °C/W - Continuous - Pulsed (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.
5 62.
5 Package Marking and Ordering Information Device Marking FDB6030BL FDP6030BL Device FDB6030BL FDP6030BL Reel Size 13’’ Tube Tape Width 24mm N/A Quantity 800 45 200 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.
C FDP6030BL/FDB6030BL Electrical Characteristics Symbol WDSS IAR TC = 25°C unless otherwise noted Parameter Test Conditions (Note 1) Min Typ Max 150 40 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Drain-Source...


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