DatasheetsPDF.com

FDP6030L

Fairchild Semiconductor
Part Number FDP6030L
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These...
Datasheet PDF File FDP6030L PDF File

FDP6030L
FDP6030L

Overview
April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 52 A, 30 V.
RDS(ON) = 0.
0135 Ω @ VGS=10 V RDS(ON) = 0.
020 Ω @ VGS=4.
5 V.
Improved replacement for NDP6030L/NDB6030L.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
_________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise note FDP6030L 30 ±20 52 156 75 0.
5 -65 to 175 FDB6030L Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG RθJC RθJA Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.
5 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDP6030L Rev.
C1 Electrical Characteristics Symbol Parameter T C = 25°C unless otherwise noted) Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 21 A 150 21 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 C VGS = 10 V, ID = 26 A TJ = 125°C VGS = 4.
5 V, ID =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)