2SB834

2SB831 : 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current.

2SB831 : 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 (Previous ADE-208-1033) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.datasheet4u.com/ 2SB831.

2SB831 : SMD Type Silicon PNP Epitaxial 2SB831 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Low frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -0.7 1 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to .

2SB831 : Product specification 2SB831 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Low frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -0.7 1 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltag.

2SB833 : 2SB833 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . High Collector Current : Ic=-30A . High DC Current Gain : h FE ( 2 )=1000(Min.) (V CE =-5V, I C =-20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic lB_ ?C Ti Tstg RATING -80 -80 -5 -30 -1 UNIT 150 150 -65-150 1. BASE 2. EMITTER COLLECTOR (CASE) TO — TOSHIBA TC—3 , TB-3 2— 2 1A1 Mounting kit.

2SB834 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3.0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 30 W 150 ℃ Tstg Storage Temperature Ran.

2SB834 : www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -60 -60 -7.0 -3.0 1.5 30 0.24 +150 -55 to +150 Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristics Coll.

2SB834 : ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 1.5 W UNIT V V V A A Free Datasheet http://www.datasheet4u.com/ SavantIC Semiconductor Product Specification Silicon PNP Power Transi.

2SB834 : Low frequency power amplifier applications. PNP SILICON TRANSISTOR Lead-Free: 2SB834L Halogen Free: 2SB834G „ ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T Package TO-126 TO-220 TO-220F Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tube Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-018.D Free Datasheet http://www.datasheet4u.com/ 2SB834 „ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation (TC=25°C) TO.

2SB834 : It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 60 60 7 3.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ( Ta = 25 C) ELECTRICAL CHARACTERISTICSBAG Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=60V.

2SB834 : TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，, 2SD880(BR3DD880R)。 Low collector saturation voltage, collector power dissipation, complementary to 2SD880(BR3DD880R). / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 60～120 Y 100～200 GR 150～300 http://www.fsbrec.com 1/6 2SB834(BR3CA834R) Rev.C Feb.-2015 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current -.

2SB834 : Elektronische Bauelemente 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Power switching applications CLASSIFICATION OF hFE Product-Rank 2SB834-O Range 60~120 2SB834-Y 100~200 ITO-220J BN MA D E H JC  Base Collector   Emitter K LL G F REF. A B C D E F G Millimeter Min. Max. 14.80 15.60 9.50 10.50 13.00 REF. 4.30 4.70 2.50 3.20 2.40 2.90 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 3.00 4.00 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90  3.5 REF. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter.

2SB834 : PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Continuous Peak Collector Dissipation Junction and Storage Temperature -60 -7 -3 -6 -0.5 1.5 -55 to +150 V V A A W ℃ X031 Rev.A www.gmicroelec.com 1 Production specification PNP Epitaxial Sil.

2SB834I : TO-251 PNP 。Silicon PNP transistor in a TO-251 Plastic Package.  / Features ，, 2SD880I 。 Low collector saturation voltage, collector power dissipation, complementary to 2SD880I. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 60～120 Y 100～200 GR 150～300 http://www.fsbrec.com 1/6 2SB834I Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissi.