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BAP50-05

NXP
Part Number BAP50-05
Manufacturer NXP
Description Silicon PIN diode
Published Mar 26, 2005
Detailed Description BAP50-05 Silicon PIN diode Rev. 3.1 — 8 February 2019 Product data sheet 1 Product profile 1.1 General description Tw...
Datasheet PDF File BAP50-05 PDF File

BAP50-05
BAP50-05

Overview
BAP50-05 Silicon PIN diode Rev.
3.
1 — 8 February 2019 Product data sheet 1 Product profile 1.
1 General description Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package.
1.
2 Features and benefits • Two elements in common cathode configuration in a small-sized plastic SMD package • Low diode capacitance • Low diode forward resistance 1.
3 Applications • General RF application 2 Pinning information Table 1.
 Discrete pinning Pin Description 1 anode 2 anode 3 common cathode Simplified outline Graphic symbol 3 3 1 Top view 1 2 2 aaa-029921 NXP Semiconductors BAP50-05 Silicon PIN diode 3 Ordering information Table 2.
 Ordering information Type number Package Name Description BAP50-05 - plastic surface-mounted package; 3 leads 4 Marking Table 3.
 Marking code Type number BAP50-05 Marking code 1C% 5 Limiting values Table 4.
 Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VR continuous reverse - voltage IF continuous forward - current Ptot total power dissipation Tsp ≤ 90 °C - Tstg storage temperature -65 Tj junction temperature -65 6 Thermal characteristics Table 5.
 Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Version SOT023 Max Unit 50 V 50 mA 250 mW +150 °C +150 °C Typ Unit 220 K/W BAP50-05 Product data sheet All information provided in this document is subject to legal disclaimers.
Rev.
3.
1 — 8 February 2019 © NXP B.
V.
2019.
All rights reserved.
2/9 NXP Semiconductors 7 Characteristics Table 6.
 Characteristics Tj = 25 °C unless otherwise specified.
Symbol Parameter VF forward voltage VR reverse voltage IR reverse current Cd diode capacitance rD diode forward resistance Conditions IF = 50 mA IR = 10 μA VR = 50 V f = 1 MHz (see Figure 1) VR = 0 V VR = 1 V VR = 5 V f = 100 MHz (see Figure 2) IF = 0.
5 mA IF = 1 mA IF = 10...


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