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BAP50-02

ETL
Part Number BAP50-02
Manufacturer ETL
Description General purpose PIN diode
Published Aug 13, 2007
Detailed Description www.DataSheet4U.com General purpose PIN diode BAP50 – 02 FEATURES · Low diode capacitance · Low diode forward resistanc...
Datasheet PDF File BAP50-02 PDF File

BAP50-02
BAP50-02

Overview
www.
DataSheet4U.
com General purpose PIN diode BAP50 – 02 FEATURES · Low diode capacitance · Low diode forward resistance.
APPLICATIONS · General RF applications.
DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package.
2 1 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN.
– – – -65 -65 MAX.
50 50 715 +150 +150 UNIT V mA mW °C °C T s =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL VF VR IR Cd PARAMETER forward voltage reverse voltage reverse current diode capacitance CONDITIONS I F =50 mA I R =10µA V R =50 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz rD diode forward resistance I F = 0.
5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 V R = 0; f = 900 MHz V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz |s 21| 2 insertion loss I F = 0.
5 mA; f = 900 MHz I F = 0.
5 mA; f = 1800 MHz I F = 0.
5 mA; f = 2450 MHz I F = 1 mA; f = 900 MHz I F = 1 mA; f = 1800 MHz I F = 1 mA; f = 2450 MHz |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz I F = 10 mA; f = 1800 MHz I F = 10 mA; f = 2450 MHz MIN – 50 – – – – – – – – – – – – – – – – – – – TYP.
0.
95 – – 0.
4 0.
3 0.
22 25 14 3 20.
4 17.
3 15.
5 1.
74 1.
79 1.
88 1.
03 1.
09 1.
15 0.
26 0.
32 0.
34 MAX.
1.
1 – 100 – 0.
55 0.
35 40 25 5 – – – – – – – – – – – – UNIT V V nA pF pF pF Ω Ω Ω dB dB dB dB dB dB dB dB dB dB dB dB |s 21| 2 isolation |s 21| 2 insertion loss S23–1/2 BAP50-02 ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
(Continue) SYMBOL τL PARAMETER charge carrier life time CONDITIONS when switched from I F =10 mA to I R = 6 mA; R L = 100 Ω; measured at I R =3 mA I F = 100 mA; f = 100 MHz MIN – TYP.
1.
05 MAX.
– UNIT µs L S series inductance – 0.
6 – nH Note 1.
Guaranteed ...


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