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BAP50-04W

NXP
Part Number BAP50-04W
Manufacturer NXP
Description General purpose PIN diode
Published Aug 13, 2007
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP50-04W General purpose PIN diode Produ...
Datasheet PDF File BAP50-04W PDF File

BAP50-04W
BAP50-04W

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP50-04W General purpose PIN diode Product specification 2001 Jan 29 Philips Semiconductors Product specification General purpose PIN diode FEATURES • Two elements in series configuration in a small SMD plastic package • Low diode capacitance • Low diode forward resistance.
APPLICATIONS • General RF applications.
DESCRIPTION Two planar PIN diodes in series configuration in an SOT323 small SMD plastic package.
1 Top view 2 handbook, halfpage BAP50-04W PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection 3 3 1 2 MAM391 Marking code: 6W-.
Fig.
1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 50 50 240 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN.
MAX.
UNIT 2001 Jan 29 2 Philips Semiconductors Product specification General purpose PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL Per diode VF VR IR Cd forward voltage reverse voltage reverse current diode capacitance IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.
5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 τL LS Note 1.
Guaranteed on AQL basis: inspection level S4, AQL 1.
0.
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point charge carrier life time series inductance when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 10 mA; f = 100 MHz − 50 − − − − − − − − − PARAMETER CONDITIONS MIN.
BAP50-04W TYP.
MAX.
UNIT 0.
95 − − 0.
45 0.
35 0.
30 25 14 3 1.
05 1.
60 1.
1 − 100 − 0.
6 0.
5 40 25 5 − − V V nA pF pF pF Ω Ω Ω µs nH VALUE 250 UNIT K/...


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